Synthesis and optoelectronic properties of two-dimensional transition metal dichalcogenides

The unique properties and potential of two-dimensional (2D) transition metal dichalcogenides (TMDs) materials have garnered significant attention in the field of optoelectronics. Among the various methods used for their synthesis and growth, chemical vapor deposition (CVD) stands out as a widely employed technique. Recently, we have explored different strategies to synthesize 2D materials and heterostructures through CVD method, with the aim of enhancing their functionality for advanced photodetection applications. These synthesis approaches of 2D TMDs encompass the low-temperature growth and thermally-assisted tellurization method. Additionally, we have investigated defect engineering of 2D materials for single photon emitters, the fabrication of homojunctions including 2H-MoTe₂ with asymmetric thickness and 1T/2H-MoTe₂ for excellent Ohmic contact, and mixed-dimensional heterostructures for self-powered photodetectors. These endeavors have shed light on the mechanisms underlying CVD synthesis of 2D TMDs and their applications in advanced optoelectronics. Consequently, they have significantly contributed to our understanding of optoelectronics and the integration of 2D materials into advanced image sensing technologies.